A SURVEY OF THE HETEROEPITAXIAL GROWTH OF SEMICONDUCTOR FILMS ON INSULATING SUBSTRATES.MANASEVIT HM.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 2; PP. 125-148; BIBL. 3 P. 1/2Article

HETEROEPITAXIAL SILICON GROWTH USING SIH₄ IN HELIUM-HYDROGEN ATMOSPHERESMANASEVIT HM.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1785-1789; BIBL. 24 REF.Article

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. VII: GALLIUM ANTIMONIDEMANASEVIT HM; HESS KL.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 11; PP. 2031-2033; BIBL. 21 REF.Article

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

THE PREPARATION AND PROPERTIES OF (111) SI FILMS GROWN ON SAPPHIRE BY THE SIH₄-H₂ PROCESS.MANASEVIT HM; ERDMANN FM; THORSEN AC et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 1; PP. 52-57; BIBL. 15 REF.Article

ELECTRICAL PROPERTIES OF EPITAXIAL INDIUM PHOSPHIDE FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONYANG JJ; RUTH RP; MANASEVIT HM et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6729-6734; BIBL. 20 REF.Article

MATERIAL AND DEVICE PROPERTIES OF HETEROEPITAXIAL GAAS ON BEO.THORSEN AC; MANASEVIT HM; HARADA RH et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 855-862; H.T. 3; BIBL. 17 REF.Article

TRIMETHYLSTIBINE AS A SOURCE OF SB FOR DOPING EPITAXIAL SI LAYERS.MANASEVIT HM; SIMPSON WI; ERDMANN FM et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 7; PP. 967-968; BIBL. 4 REF.Article

HETEROEPITAXIAL SI FILMS ON YTTRIA-STABILIZED, CUBIC ZIRCONIA SUBSTRATESGOLECKI I; MANASEVIT HM; MOUDY LA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 6; PP. 501-503; BIBL. 17 REF.Article

AN ANALYTICAL EVALUATION OF GAAS GROWN WITH COMMERCIAL AND REPURIFIED TRIMETHYLGALLIUMHESS KL; DAPKUS PD; MANASEVIT HM et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1115-1137; BIBL. 35 REF.Article